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Monolithic 3D integration of atomic-layer-deposited oxide semiconductors on 200-mm silicon wafers

15 September 2026 at 08:00

Nature Nanotechnology, Published online: 15 September 2026; doi:10.1038/s41565-026-02276-0

Monolithic 3D integration of oxide semiconductor devices on a 200-mm wafer is demonstrated, enabling vertically interconnected logic and memory and supporting the design of an energy-efficient AI accelerator.
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