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Schema-Aware Planning and Hybrid Knowledge Toolset for Reliable Knowledge Graph Triple Verification

arXiv:2604.04190v1 Announce Type: new Abstract: Knowledge Graphs (KGs) serve as a critical foundation for AI systems, yet their automated construction inevitably introduces noise, compromising data trustworthiness. Existing triple verification methods, based on graph embeddings or language models, often suffer from single-source bias by relying on either internal structural constraints or external semantic evidence, and usually follow a static inference paradigm. As a result, they struggle with complex or long-tail facts and provide limited interpretability. To address these limitations, we propose SHARP (Schema-Hybrid Agent for Reliable Prediction), a training-free autonomous agent that reformulates triple verification as a dynamic process of strategic planning, active investigation, and evidential reasoning. Specifically, SHARP combines a Memory-Augmented Mechanism with Schema-Aware Strategic Planning to improve reasoning stability, and employs an enhanced ReAct loop with a Hybrid Knowledge Toolset to dynamically integrate internal KG structure and external textual evidence for cross-verification. Experiments on FB15K-237 and Wikidata5M-Ind show that SHARP significantly outperforms existing state-of-the-art baselines, achieving accuracy gains of 4.2% and 12.9%, respectively. Moreover, SHARP provides transparent, fact-based evidence chains for each judgment, demonstrating strong interpretability and robustness for complex verification tasks.

Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model

arXiv:2603.06881v1 Announce Type: cross Abstract: Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages. However, the data retention of 3D Fe-VNAND is hindered by the complex interaction between charge detrapping and ferroelectric depolarization. Developing optimized device designs requires exploring an extensive parameter space, but the high computational cost of conventional Technology Computer-Aided Design (TCAD) tools makes such wide-scale optimization impractical. To overcome these simulation barriers, we present a Physics-Informed Neural Operator (PINO)-based AI surrogate model designed for high-efficiency prediction of threshold voltage (Vth) shifts and retention behavior. By embedding fundamental physical principles into the learning architecture, our PINO framework achieves a speedup exceeding 10000x compared to TCAD while maintaining physical accuracy. This study demonstrates the model's effectiveness on a single FeFET configuration, serving as a pathway toward modeling the retention loss mechanisms.
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