arXiv:2604.01563v1 Announce Type: new Abstract: In LLM training, normalization layers and optimizers are typically treated as independent design choices. In a 3x2 factorial at 1B parameters and 1000 training steps, we show this assumption can fail: Dynamic Erf (Derf; Chen & Liu, 2025) suffers a large negative interaction with Muon (Jordan, 2024), with its gap to RMSNorm growing from +0.31 nats under AdamW to +0.97 under Muon, approximately three times larger. Dynamic Tanh (DyT; Zhu et al., 2025), included as a bounded-normalizer control, shows no such penalty. Our evidence points to two failure modes of erf under Muon's faster spectral-norm growth: saturation (lossy compression) and scale blindness (discarding activation magnitude). An EMA-blend that reintroduces running scale estimates recovers ~84% of the gap. Separately, reducing Derf's alpha from its published default (0.5 to 0.3) recovers ~80% by keeping erf in its near-linear regime, where it approximately preserves relative scale; this setting is not the published default of Chen & Liu (2025). Using Derf's published default alpha with Muon incurs a 0.66-nat interaction penalty without producing NaNs or divergence, making the failure easy to miss in short pilot runs.

arXiv:2603.06881v1 Announce Type: cross Abstract: Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages. However, the data retention of 3D Fe-VNAND is hindered by the complex interaction between charge detrapping and ferroelectric depolarization. Developing optimized device designs requires exploring an extensive parameter space, but the high computational cost of conventional Technology Computer-Aided Design (TCAD) tools makes such wide-scale optimization impractical. To overcome these simulation barriers, we present a Physics-Informed Neural Operator (PINO)-based AI surrogate model designed for high-efficiency prediction of threshold voltage (Vth) shifts and retention behavior. By embedding fundamental physical principles into the learning architecture, our PINO framework achieves a speedup exceeding 10000x compared to TCAD while maintaining physical accuracy. This study demonstrates the model's effectiveness on a single FeFET configuration, serving as a pathway toward modeling the retention loss mechanisms.