Nature Nanotechnology, Published online: 05 October 2026; doi:10.1038/s41565-026-02301-2

Multiscale physicochemical and electrochemical characterizations demonstrate that atomic-scale structural distortion and nanoscale short-range ordering govern the thermodynamic and kinetic components of potential hysteresis in Li||DRX cells.

Nature Nanotechnology, Published online: 29 September 2026; doi:10.1038/s41565-026-02298-8

A torsion-pendulum gravitational-force sensor with an optical microcavity readout leverages coupled photon–phonon effects to enhance sensitivity to the tiny gravitational pull from a millimetre-sized source mass.

Nature Nanotechnology, Published online: 29 September 2026; doi:10.1038/s41565-026-02280-4

Four-inch rhombohedral-stacked boron nitride wafers are reproducibly synthesized through a step-templated interfacial epitaxy strategy, exhibiting high-density, fast-speed and non-volatile memory performances.

Nature Nanotechnology, Published online: 28 September 2026; doi:10.1038/s41565-026-02284-0

MRI-responsive hydrogel microparticles embedded with zinc ferrite nanoparticles enable deep-tissue mapping of dynamic tumour compression, revealing that transient stress surges, rather than cumulative mechanical load, lead to the epithelial–mesenchymal transition and tumour remodelling.

Nature Nanotechnology, Published online: 28 September 2026; doi:10.1038/s41565-026-02282-2

Magnetic-resonance-responsive sensors comprising zinc ferrite nanoparticles embedded in hydrogel microparticles enable mapping of tissue stress, revealing that acute stress surges, rather than cumulative mechanical load, drive epithelial–mesenchymal transition and tumour remodelling.

Nature Nanotechnology, Published online: 17 September 2026; doi:10.1038/s41565-026-02274-2

Two-dimensional materials offer low resistivity, strong thermal management and back-end-of-line compatibility, making them promising for advanced interconnects, backside power delivery and boosting efficiency in next-generation semiconductor chips.

Nature Nanotechnology, Published online: 15 September 2026; doi:10.1038/s41565-026-02276-0

Monolithic 3D integration of oxide semiconductor devices on a 200-mm wafer is demonstrated, enabling vertically interconnected logic and memory and supporting the design of an energy-efficient AI accelerator.